Datasheet Summary
Single P-channel MOSFET
- General description
ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.
- Features
- Vds=-30V
- Id=-4.2A (Vgs=-10V)
- Rds(on) < 50mΩ (Vgs=-10V)
- Rds(on) < 65mΩ (Vgs=-4.5V)
- Rds(on) < 120mΩ (Vgs=-2.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C Tc=70°C
Junction and storage temperature range
Symbol Vds Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit Note
-30 V
±12 V
-4.2...