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ELM13401CA-S - Single P-channel MOSFET

General Description

ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Key Features

  • Vds=-30V.
  • Id=-4.2A (Vgs=-10V).
  • Rds(on) < 50mΩ (Vgs=-10V).
  • Rds(on) < 65mΩ (Vgs=-4.5V).
  • Rds(on) < 120mΩ (Vgs=-2.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Ta=25°C Ta=70°C Pulsed drain current Power dissipation Tc=25°C Tc=70°C Junction and storage temperature range Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V -4.2 -3.5.

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Datasheet Details

Part number ELM13401CA-S
Manufacturer ELM Technology Corporation
File Size 401.12 KB
Description Single P-channel MOSFET
Datasheet download datasheet ELM13401CA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single P-channel MOSFET ELM13401CA-S ■General description ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. ■Features • Vds=-30V • Id=-4.2A (Vgs=-10V) • Rds(on) < 50mΩ (Vgs=-10V) • Rds(on) < 65mΩ (Vgs=-4.5V) • Rds(on) < 120mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Ta=25°C Ta=70°C Pulsed drain current Power dissipation Tc=25°C Tc=70°C Junction and storage temperature range Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V -4.2 -3.5 A1 -30 A 2 1.4 1.