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Single P-channel MOSFET
■General description
ELM23401CA-S ■Features
http://www.elm-tech.com
ELM23401CA-S uses advanced trench technology to
• Vds=-30V
provide excellent Rds(on), low gate charge and low gate
• Id=-4.0A
resistance.
• Rds(on) = 65mΩ (Vgs=-10V)
• Rds(on) = 75mΩ (Vgs=-4.5V)
• Rds(on) = 100mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Ta=25°C Ta=70°C
Pulsed drain current
Power dissipation
Tc=25°C Tc=70°C
Junction and storage temperature range
Symbol Vds Vgs
Id
Idm
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit Note
-30 V
±12 V
-4.0 -3.2
A
-27 A 3
1.2 0.8
W2
-55 to 150
°C
■Thermal characteristics
Parameter Maximum junction-to-ambient
Symbol Rθja
Typ. 100
Max.