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ELM43400CB-S - Single N-channel MOSFET

General Description

ELM43400CB-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=30V.
  • Id=5.8A.
  • Rds(on) = 27mΩ (Vgs=10V).
  • Rds(on) = 32mΩ (Vgs=4.5V).
  • Rds(on) = 40mΩ (Vgs=2.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 30 ±12 5.8 4.9 20 1 -55 to 150 -55 to 150 Unit Note V V A A 2 W 3.

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Datasheet Details

Part number ELM43400CB-S
Manufacturer ELM
File Size 1.76 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM43400CB-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-channel MOSFET ELM43400CB-S ■General description ELM43400CB-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=30V • Id=5.8A • Rds(on) = 27mΩ (Vgs=10V) • Rds(on) = 32mΩ (Vgs=4.5V) • Rds(on) = 40mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 30 ±12 5.8 4.9 20 1 -55 to 150 -55 to 150 Unit Note V V A A 2 W 3 °C °C ■Thermal characteristics Parameter Thermal resistance junction-ambient Symbol Typ. - Rθja t ≤ 10s - Max.