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ELM4C2901FBA-S - Complementary MOSFET

Description

ELM4C2901FBA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

  • N-channel.
  • Vds=20V.
  • Id=3.8A(Vgs=4.5V).
  • Rds(on) = 50mΩ(Vgs=4.5V).
  • Rds(on) = 75mΩ(Vgs=2.5V).
  • Rds(on) = 100mΩ(Vgs=1.8V) https://www. elm-tech. com P-channel.
  • Vds=-20V.
  • Id=-2.5A(Vgs=-4.5V).
  • Rds(on) = 70mΩ(Vgs=-4.5V).
  • Rds(on) = 95mΩ(Vgs=-2.5V).
  • Rds(on) = 115mΩ(Vgs=-1.8V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=4.5) Ta=25°C Ta=70°C Pulsed.

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Datasheet Details

Part number ELM4C2901FBA-S
Manufacturer ELM
File Size 1.38 MB
Description Complementary MOSFET
Datasheet download datasheet ELM4C2901FBA-S Datasheet
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Complementary MOSFET ■General description ELM4C2901FBA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. ELM4C2901FBA-S ■Features N-channel • Vds=20V • Id=3.8A(Vgs=4.5V) • Rds(on) = 50mΩ(Vgs=4.5V) • Rds(on) = 75mΩ(Vgs=2.5V) • Rds(on) = 100mΩ(Vgs=1.8V) https://www.elm-tech.com P-channel • Vds=-20V • Id=-2.5A(Vgs=-4.5V) • Rds(on) = 70mΩ(Vgs=-4.5V) • Rds(on) = 95mΩ(Vgs=-2.5V) • Rds(on) = 115mΩ(Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=4.5) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj N-ch (Max.) 20 ±12 3.8 3.0 15 1.
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