ELM ELM4C2901FBA-S
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4C2901FBA-S |
|---|---|
| Datasheet | ELM4C2901FBA-S Download |
| Manufacturer |  ELM |
| Description | Complementary MOSFET |
| Buy | Stock & Price |
FEATURES
N-channel● Vds=20V
● Id=3.8A(Vgs=4.5V)
● Rds(on) = 50mΩ(Vgs=4.5V)
● Rds(on) = 75mΩ(Vgs=2.5V)
● Rds(on) = 100mΩ(Vgs=1.8V) P-channel
● Vds=-20V
● Id=-2.5A(Vgs=-4.5V)
● Rds(on) = 70mΩ(Vgs=-4.5V)
● Rds(on) = 95mΩ(Vgs=-2.5V)
● Rds(on) = 115mΩ(Vgs=-1.8V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=4.5) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj N-ch (Max.) 20 ±12 3.8 3.0 15 1.1 -55 to 150 -55 to 150 P-ch (Max.) -20 ±12 -2.5 -2.0 -15 1.1 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 W 3 °C °C
●Thermal Characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-case Symbol Typ. Rθja - Rθjc - Max. 110 70 Unit Note °C/W 1 °C/W 1
●Pin configuration TSOP-6(TOP VIEW) 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin name GATE1 SOURCE2 GATE2 DRAIN2 SOURCE1 DRAIN1
●Circuit Rev.1.0 1/8 Complement...
