ELM4C3909FBA-S
ELM4C3909FBA-S is Complementary MOSFET manufactured by ELM.
description
ELM4C3909FBA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.
- Features
N-channel
- Vds=30V
- Id=3.8A(Vgs=4.5V)
- Rds(on) = 60mΩ(Vgs=10V)
- Rds(on) = 65mΩ(Vgs=4.5V)
- Rds(on) = 85mΩ(Vgs=2.5V) https://.elm-tech.
P-channel
- Vds=-30V
- Id=-2.3A(Vgs=-4.5V)
- Rds(on) = 115mΩ(Vgs=-10V)
- Rds(on) = 145mΩ(Vgs=-4.5V)
- Rds(on) = 200mΩ(Vgs=-2.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage Gate-source voltage
Continuous drain current (Vgs=4.5)
Ta=25°C Ta=70°C
Pulsed drain current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Pd Tstg Tj
N-ch (Max.) 30 ±12 3.8 3.0 16 1.1
-55 to 150 -55 to 150
P-ch (Max.) -30 ±12 -2.3 -1.8 -15 1.1
-55 to 150 -55 to 150
Unit Note V V
°C
°C
- Thermal Characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-case
Symbol
Typ....
