ELM ELM4C4903FKA-N
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4C4903FKA-N |
|---|---|
| Datasheet | ELM4C4903FKA-N Download |
| Manufacturer |  ELM |
| Description | Complementary MOSFET |
| Buy | Stock & Price |
FEATURES
N-channel● Vds=40V
● Id=23A (Vgs=10V)
● Rds(on) = 28mΩ(Vgs=10V)
● Rds(on) = 42mΩ(Vgs=4.5V) P-channel
● Vds=-40V
● Id=-20A (Vgs=-10V)
● Rds(on) = 40mΩ(Vgs=-10V)
● Rds(on) = 65mΩ(Vgs=-4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm EAS Ias Pd Tstg Tj N-ch (Max.) 40 ±20 23 18 46 28 17.8 25.0 -55 to 150 -55 to 150 P-ch (Max.) -40 ±20 -20 -16 -40 66 -27.2 31.3 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 mJ 3 A W 4 °C °C
●Thermal Characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-case Symbol Typ. Rθja - Rθjc - Max. 62 5 Unit Note °C/W 1 °C/W 1
●Pin configuration TO-252-4(TOP VIEW) TAB 12 34 Pin No. 1 2 3 4 TAB Pin name SOURCE1 GATE1 SOURCE2 GATE2 DRAIN1/DRAIN2
●Circuit
● N-ch...
