ELM4C4903FKA-N Datasheet PDF (Complementary MOSFET)

ELM4C4903FKA-N - Complementary MOSFET

Description

ELM4C4903FKA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

N-channel.
Vds=40V.
Id=23A (Vgs=10V).
Rds(on) = 28mΩ(Vgs=10V).
Rds(on) = 42mΩ(Vgs=4.5V) http://www. elm-tech. com P-channel.
Vds=-40V.
Id=-20A (Vgs=-10V).
Rds(on) = 40mΩ(Vgs=-10V).
Rds(on) = 65mΩ(Vgs=-4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total powe.

Datasheet Details

Part number	ELM4C4903FKA-N
Manufacturer	ELM
File Size	1.10 MB
Description	Complementary MOSFET
Datasheet	ELM4C4903FKA-N Datasheet
Additional preview pages of the ELM4C4903FKA-N datasheet.

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Full PDF Text Transcription

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Complementary MOSFET ■General description ELM4C4903FKA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. ELM4C4903FKA-N ■Features N-channel • Vds=40V • Id=23A (Vgs=10V) • Rds(on) = 28mΩ(Vgs=10V) • Rds(on) = 42mΩ(Vgs=4.5V) http://www.elm-tech.com P-channel • Vds=-40V • Id=-20A (Vgs=-10V) • Rds(on) = 40mΩ(Vgs=-10V) • Rds(on) = 65mΩ(Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm EAS Ias Pd Tstg Tj N-ch (Max.) 40 ±20 23 18 46 28 17.8 25.

Published: Nov 10, 2025 |