Vds=60V
to provide excellent Rds(on) and low gate charge.
Id=29A.
Rds(on) = 15mΩ (Vgs=10V).
Rds(on) = 21mΩ (Vgs=4.5V).
Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=10V)
Tc=25°C Tc=100°C
Pulsed drain current
Single pulse avalanche energy
Avalanche current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junct.
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Dual N-channel MOSFET
ELM4DNB6254FNA-N
https://www.elm-tech.com
■General description
■Features
ELM4DNB6254FNA-N uses advanced trench technology
• Vds=60V
to provide excellent Rds(on) and low gate charge.
• Id=29A
• Rds(on) = 15mΩ (Vgs=10V)
• Rds(on) = 21mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=10V)
Tc=25°C Tc=100°C
Pulsed drain current
Single pulse avalanche energy
Avalanche current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm EAS Aas Pd Tstg
Tj
Limit 60 ±20 29 23 58 45 30 20.
ELM4DNB6254FNA-N Datasheet
