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ELM4N0010FCA-S - Single N-channel MOSFET

Description

ELM4N0010FCA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

  • Vds=100V.
  • Id=2.1A (Vgs=10V).
  • Rds(on) = 120mΩ (Vgs=10V).
  • Rds(on) = 150mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Ta=25°C Ta=70°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 100 ±20 2.1 1.7 8.4 1.00 0.64 -55 to 150 -55 to 150 Unit Note V V.

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Datasheet Details

Part number ELM4N0010FCA-S
Manufacturer ELM
File Size 1.32 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N0010FCA-S Datasheet
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Single N-channel MOSFET ELM4N0010FCA-S ■General description ELM4N0010FCA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=100V • Id=2.1A (Vgs=10V) • Rds(on) = 120mΩ (Vgs=10V) • Rds(on) = 150mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Total power dissipation Ta=25°C Ta=70°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Pd Tstg Tj Limit 100 ±20 2.1 1.7 8.4 1.00 0.
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