ELM4N0026FAA-N
ELM4N0026FAA-N is Single N-channel MOSFET manufactured by ELM.
description
- Features
ELM4N0026FAA-N uses advanced trench technology
- Vds=100V to provide excellent Rds(on), low gate charge and low
- Id=7.5A (Vgs=10V) gate threshold voltage.
- Rds(on) = 20mΩ (Vgs=10V)
- Rds(on) = 25mΩ (Vgs=4.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=10V)
Ta=25°C Ta=70°C
Pulsed drain current
Single pulse avalanche energy
Avalanche current
Total power dissipation
Ta=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm EAS Ias Pd Tstg
Tj
Limit 100 ±20 7.5 6.0 40 16 18 2.5
- 55 to 150
- 55 to 150
Unit
Note
2 m J
°C
°C
- Thermal characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-ambient
Symbol Typ....
