ELM4N18N20FDA-N Datasheet Single N-channel MOSFET

Manufacturer: ELM

Overview: Single N-channel MOSFET ELM4N18N20FDA-N ■General.

Datasheet Details

ELM4N18N20FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

https://www.elm-tech.com ■

Vds=200V.
Id=18A (Vgs=10V).
Rds(on) = 170mΩ (Vgs=10V).
Rds(on) = 180mΩ (Vgs=4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 200 ±20 18.0 11.7 40.