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ELM4N18N20FDA-N - Single N-channel MOSFET

Description

ELM4N18N20FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

  • Vds=200V.
  • Id=18A (Vgs=10V).
  • Rds(on) = 170mΩ (Vgs=10V).
  • Rds(on) = 180mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 200 ±20 18.0 11.7 40.

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Datasheet Details

Part number ELM4N18N20FDA-N
Manufacturer ELM
File Size 1.82 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N18N20FDA-N Datasheet
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Single N-channel MOSFET ELM4N18N20FDA-N ■General description ELM4N18N20FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=200V • Id=18A (Vgs=10V) • Rds(on) = 170mΩ (Vgs=10V) • Rds(on) = 180mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 200 ±20 18.0 11.
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