ELM ELM4N20N15FDA-N
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4N20N15FDA-N |
|---|---|
| Datasheet | ELM4N20N15FDA-N Download |
| Manufacturer |  ELM |
| Description | Single N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Vds=150V● Id=20A (Vgs=10V)
● Rds(on) = 88mΩ (Vgs=10V)
● Rds(on) = 100mΩ (Vgs=4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current (Vgs=10V) Tc=100°C Ta=25°C Ta=70°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 150 ±20 20.0 14.0 3.0 2.5 40 53 18 72.6 2.1 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 mJ 3 A W 4 W °C °C
●Thermal characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-case Symbol Typ. Rθja - Rθjc - Max. 60 1.72 Unit Note °C/W 1 °C/W 1
●Pin configuration TO-252 (TOP VIEW) (BOTTOM VIEW) 2 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE
●Circuit D G S Rev.1.0 1/5 Single N-channel MOSFET
●Electrical characteristics ELM4N20N15FDA-N Parameter STATIC PARAMETERS Drain-source breakdown voltage Static drain...
