ELM4N28N15FDA-N
ELM4N28N15FDA-N is Single N-channel MOSFET manufactured by ELM.
description
ELM4N28N15FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://.elm-tech.
- Features
- Vds=150V
- Id=30A (Vgs=10V)
- Rds(on) = 46mΩ (Vgs=10V)
- Rds(on) = 50mΩ (Vgs=4.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=10V)
Tc=25°C Tc=100°C
Pulsed drain current
Single pulsed avalanche energy
Avalanche current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Eas Ias Pd Tstg Tj
Limit 150 ±20 30 22 60 216 38 115 -55 to 175 -55 to 175
Unit
Note
2 m J
°C
°C
- Thermal characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-case
Symbol Typ.
Rθja
- Rθjc
- Max. 55.0...