ELM ELM4N28N15FDA-N
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4N28N15FDA-N |
|---|---|
| Datasheet | ELM4N28N15FDA-N Download |
| Manufacturer |  ELM |
| Description | Single N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Vds=150V● Id=30A (Vgs=10V)
● Rds(on) = 46mΩ (Vgs=10V)
● Rds(on) = 50mΩ (Vgs=4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 150 ±20 30 22 60 216 38 115 -55 to 175 -55 to 175 Unit Note V V A 1 A 2 mJ 3 A W 4 °C °C
●Thermal characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-case Symbol Typ. Rθja - Rθjc - Max. 55.0 1.3 Unit Note °C/W 1 °C/W 1
●Pin configuration TO-252 (TOP VIEW) (BOTTOM VIEW) 2 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE
●Circuit D G S Rev.1.0 1/5 Single N-channel MOSFET
●Electrical characteristics ELM4N28N15FDA-N Parameter STATIC PARAMETERS Drain-source breakdown voltage Static drain-source on-resistance Gate threshold volta...
