Description
ELM4N28N15FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.
Features
- Vds=150V.
- Id=30A (Vgs=10V).
- Rds(on) = 46mΩ (Vgs=10V).
- Rds(on) = 50mΩ (Vgs=4.5V).
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=10V)
Tc=25°C Tc=100°C
Pulsed drain current
Single pulsed avalanche energy
Avalanche current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Eas Ias Pd Tstg Tj
Limit 150 ±20 30 22 60 216 3.
ELM4N28N15FDA-N Datasheet
