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ELM4N4094FDA-N - Single N-channel MOSFET

General Description

ELM4N4094FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=40V.
  • Id=114A (Vgs=10V).
  • Rds(on) = 3.2mΩ (Vgs=10V).
  • Rds(on) = 5.3mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 40 ±20 114 72 240 14.

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Datasheet Details

Part number ELM4N4094FDA-N
Manufacturer ELM
File Size 1.76 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N4094FDA-N Datasheet

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Single N-channel MOSFET ELM4N4094FDA-N ■General description ELM4N4094FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=40V • Id=114A (Vgs=10V) • Rds(on) = 3.2mΩ (Vgs=10V) • Rds(on) = 5.3mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 40 ±20 114 72 240 145 54 73.