ELM4N6004FDA-N Datasheet PDF (Single N-channel MOSFET)

ELM4N6004FDA-N - Single N-channel MOSFET

Description

ELM4N6004FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

Vds=60V.
Id=23A (Vgs=10V).
Rds(on) = 30mΩ (Vgs=10V).
Rds(on) = 38mΩ (Vgs=4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current Tc=100°C (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj L.

Datasheet Details

Part number	ELM4N6004FDA-N
Manufacturer	ELM
File Size	1.43 MB
Description	Single N-channel MOSFET
Datasheet	ELM4N6004FDA-N Datasheet
Additional preview pages of the ELM4N6004FDA-N datasheet.

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Full PDF Text Transcription

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Single N-channel MOSFET ELM4N6004FDA-N ■General description ELM4N6004FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=60V • Id=23A (Vgs=10V) • Rds(on) = 30mΩ (Vgs=10V) • Rds(on) = 38mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current Tc=100°C (Vgs=10V) Ta=25°C Ta=70°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C Ta=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 60 ±20 23.0 15.0 5.6 4.5 46 25.5 22.6 34.7 2.

Published: Nov 8, 2025 |