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ELM4N8048FDA-N - Single N-channel MOSFET

General Description

ELM4N8048FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=80V.
  • Id=48A (Vgs=10V).
  • Rds(on) = 6.5mΩ (Vgs=10V).
  • Rds(on) = 8.5mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 80 ±20 48.0 42.5 170 5.

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Datasheet Details

Part number ELM4N8048FDA-N
Manufacturer ELM
File Size 1.88 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N8048FDA-N Datasheet

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Single N-channel MOSFET ELM4N8048FDA-N ■General description ELM4N8048FDA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. https://www.elm-tech.com ■Features • Vds=80V • Id=48A (Vgs=10V) • Rds(on) = 6.5mΩ (Vgs=10V) • Rds(on) = 8.5mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=10V) Tc=25°C Tc=100°C Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Tc=25°C Storage temperature range Operating junction temperature range Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit 80 ±20 48.0 42.5 170 57.