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ELM4N8066FDA-N - Single N-channel MOSFET

Key Features

  • ELM4N8066FDA-N uses advanced trench technology.
  • Vds=80V to provide excellent Rds(on), low gate charge and low.
  • Id=60A (Vgs=10V) gate threshold voltage.
  • Rds(on) = 8.7mΩ (Vgs=10V).
  • Rds(on) = 12.5mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Tc=25°C Continuous drain current (Vgs=10V) Tc=100°C Pulsed drain current Single pulsed avalanche energy Avalanche current Total power dissipation Tc=25°C St.

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Datasheet Details

Part number ELM4N8066FDA-N
Manufacturer ELM
File Size 2.32 MB
Description Single N-channel MOSFET
Datasheet download datasheet ELM4N8066FDA-N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-channel MOSFET ELM4N8066FDA-N https://www.elm-tech.com ■General description ■Features ELM4N8066FDA-N uses advanced trench technology • Vds=80V to provide excellent Rds(on), low gate charge and low • Id=60A (Vgs=10V) gate threshold voltage. • Rds(on) = 8.7mΩ (Vgs=10V) • Rds(on) = 12.5mΩ (Vgs=4.