ELM4N8066FDA-N
ELM4N8066FDA-N is Single N-channel MOSFET manufactured by ELM.
description
- Features
ELM4N8066FDA-N uses advanced trench technology
- Vds=80V to provide excellent Rds(on), low gate charge and low
- Id=60A (Vgs=10V) gate threshold voltage.
- Rds(on) = 8.7mΩ (Vgs=10V)
- Rds(on) = 12.5mΩ (Vgs=4.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Tc=25°C Continuous drain current (Vgs=10V)
Tc=100°C
Pulsed drain current
Single pulsed avalanche energy
Avalanche current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Eas Ias Pd Tstg Tj
Limit 80 ±20 60 38 200 101 45 52
-55 to 150 -55 to 150
Unit
Note
2 m J
°C
°C
- Thermal characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-case
Symbol Typ.
Rθja
-...
