ELM4N8066FDA-N Description
Features ELM4N8066FDA-N uses advanced trench technology Vds=80V to provide excellent Rds(on), low gate charge and low Id=60A (Vgs=10V) gate threshold voltage. 62.0 2.4 Unit Note °C/W 1 TO-252 (TOP VIEW) (BOTTOM VIEW) 2 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE Circuit D G S Rev.1.0 1/5 Single N-channel MOSFET ELM4N8066FDA-N https://.elm-tech.
ELM4N8066FDA-N Key Features
- Vds=80V
- Id=60A (Vgs=10V)
- Rds(on) = 8.7mΩ (Vgs=10V)
- Rds(on) = 12.5mΩ (Vgs=4.5V)
- Maximum absolute ratings
- 55 to 150 -55 to 150
- Thermal characteristics
- Max. 62.0 2.4