ELM4P2607FAA-S Datasheet | ELM

description - Features ELM4P2607FAA-S uses advanced trench technology to - Vds=-20V provide excellent Rds(on), low gate charge and low gate - Id=-6.9A (Vgs=-4.5V) threshold voltage. - Rds(on) = 30mΩ (Vgs=-4.5V) - Rds(on) = 38mΩ (Vgs=-2.5V) - Rds(on) = 55mΩ (Vgs=-1.8V) - Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-4.5V) Pulsed drain current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Pd Tstg Tj Limit -20 ±12 -6.9 -5.4 -20 1.0 -55 to 150 -55 to 150 Unit Note °C °C - Thermal characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-ambient t ≤ 10s Symbol Typ. - Rθja - Max. 50 100 Unit Note °C/W 1 - Pin configuration TSOP-6(TOP VIEW) Pin No. 1 2 3 4 5 6 Pin name DRAIN DRAIN GATE SOURCE DRAIN DRAIN - Circuit Rev.1.1 1/5 Single P-channel MOSFET - Electrical characteristics ELM4P2607FAA-S https://.elm-tech....