ELM ELM4P2607FAA-S
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4P2607FAA-S |
|---|---|
| Datasheet | ELM4P2607FAA-S Download |
| Manufacturer |  ELM |
| Description | Single P-channel MOSFET |
| Buy | Stock & Price |
FEATURES
ELM4P2607FAA-S uses advanced trench technology to● Vds=-20V provide excellent Rds(on), low gate charge and low gate
● Id=-6.9A (Vgs=-4.5V) threshold voltage.
● Rds(on) = 30mΩ (Vgs=-4.5V)
● Rds(on) = 38mΩ (Vgs=-2.5V)
● Rds(on) = 55mΩ (Vgs=-1.8V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-4.5V) Pulsed drain current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Pd Tstg Tj Limit -20 ±12 -6.9 -5.4 -20 1.0 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 W 3 °C °C
●Thermal characteristics Parameter Thermal resistance junction-ambient Thermal resistance junction-ambient t ≤ 10s Symbol Typ. - Rθja - Max. 50 100 Unit Note °C/W 1
●Pin configuration TSOP-6(TOP VIEW) Pin No. 1 2 3 4 5 6 Pin name DRAIN DRAIN GATE SOURCE DRAIN DRAIN
●Circuit Rev.1.1 1/5 Single P-channel MOSFET
●Electrical characteristics ELM4P2607FAA-S Parameter STATIC PARAMETER...
