ELM ELM4P4103FAA-N
The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper. The data tested by pulsed, pulse width ≤ 300μs and duty cycle ≤ 2%.| Part No. | ELM4P4103FAA-N |
|---|---|
| Datasheet | ELM4P4103FAA-N Download |
| Manufacturer |  ELM |
| Description | Single P-channel MOSFET |
| Buy | Stock & Price |
FEATURES
ELM4P4103FAA-N uses advanced trench technology● Vds=-40V to provide excellent Rds(on), low gate charge and low
● Id=-5.6A (Vgs=-10V) gate threshold voltage.
● Rds(on) = 32mΩ (Vgs=-10V)
● Rds(on) = 46mΩ (Vgs=-4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-10V) Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit -40 ±20 -5.6 -4.5 -23 41 -28.6 1.5 -55 to 150 -55 to 150 Unit Note V V A 1 A 2 mJ 3 A W 4 °C °C
●Thermal characteristics Parameter Thermal resistance junction - ambient Thermal resistance junction - case Symbol Typ. Rθja - Rθjc - Max. 85 25 Unit Note °C/W 1
●Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 3 4 5 6 7 8 Pin name SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN
●Circuit D G S Rev.1.0 1/5 Single P-channel...
