ELM4P4103FAA-N
ELM4P4103FAA-N is Single P-channel MOSFET manufactured by ELM.
description
- Features
ELM4P4103FAA-N uses advanced trench technology
- Vds=-40V to provide excellent Rds(on), low gate charge and low
- Id=-5.6A (Vgs=-10V) gate threshold voltage.
- Rds(on) = 32mΩ (Vgs=-10V)
- Rds(on) = 46mΩ (Vgs=-4.5V)
- Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-10V) Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Storage temperature range Operating junction temperature range
Ta=25°C Ta=70°C
Ta=25°C
Symbol Vds Vgs
Id
Idm Eas Ias Pd Tstg Tj
Limit -40 ±20 -5.6 -4.5 -23 41 -28.6 1.5 -55 to 150 -55 to 150
Unit
Note
2 m J
°C
°C
- Thermal characteristics
Parameter Thermal resistance junction
- ambient Thermal resistance junction
- case
Symbol
Typ.
Rθja
- Rθjc
- Max. 85 25
Unit Note
°C/W
- Pin configuration
SOP-8(TOP...