ELM4P4103FAA-N Datasheet PDF (Single P-channel MOSFET)

ELM4P4103FAA-N - Single P-channel MOSFET

Features

ELM4P4103FAA-N uses advanced trench technology.
Vds=-40V to provide excellent Rds(on), low gate charge and low.
Id=-5.6A (Vgs=-10V) gate threshold voltage.
Rds(on) = 32mΩ (Vgs=-10V).
Rds(on) = 46mΩ (Vgs=-4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-10V) Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Storage temperature range Operati.

Datasheet Details

Part number	ELM4P4103FAA-N
Manufacturer	ELM
File Size	661.30 KB
Description	Single P-channel MOSFET
Datasheet	ELM4P4103FAA-N Datasheet
Additional preview pages of the ELM4P4103FAA-N datasheet.

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Full PDF Text Transcription

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Single P-channel MOSFET ELM4P4103FAA-N https://www.elm-tech.com ■General description ■Features ELM4P4103FAA-N uses advanced trench technology • Vds=-40V to provide excellent Rds(on), low gate charge and low • Id=-5.6A (Vgs=-10V) gate threshold voltage. • Rds(on) = 32mΩ (Vgs=-10V) • Rds(on) = 46mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current (Vgs=-10V) Pulsed drain current Single pulse avalanche energy Avalanche current Total power dissipation Storage temperature range Operating junction temperature range Ta=25°C Ta=70°C Ta=25°C Symbol Vds Vgs Id Idm Eas Ias Pd Tstg Tj Limit -40 ±20 -5.6 -4.5 -23 41 -28.6 1.

Published: Nov 8, 2025 |