ELM4P6105FDA-N Overview
Key Features
- Vds=-60V to provide excellent Rds(on), low gate charge and low
- Id=-29A (Vgs=-10V) gate threshold voltage
- Rds(on)=35mΩ (Vgs=-10V)
- Rds(on)=55mΩ (Vgs=-4.5V)
- Parameter Symbol Typ. Rθja
| Part | ELM4P6105FDA-N |
|---|---|
| Description | Single P-channel MOSFET |
| Category | MOSFET |
| Manufacturer | ELM |
| Size | 1.58 MB |
Similar Parts
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |