ELM4P6105FDA-N Description
Features ELM4P6105FDA-N uses advanced trench technology Vds=-60V to provide excellent Rds(on), low gate charge and low Id=-29A (Vgs=-10V) gate threshold voltage. 62.0 2.8 Unit Note °C/W 1 °C/W 1 TO-252 (TOP VIEW) (BOTTOM VIEW) 2 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE Circuit D G S Rev.1.0 1/5 Single P-channel MOSFET ELM4P6105FDA-N https://.elm-tech.
ELM4P6105FDA-N Key Features
- Vds=-60V
- Id=-29A (Vgs=-10V)
- Rds(on)=35mΩ (Vgs=-10V)
- Rds(on)=55mΩ (Vgs=-4.5V)
- Maximum absolute ratings
- Thermal characteristics
- Max. 62.0 2.8