ELM4P6115FDA-N
ELM4P6115FDA-N is Single P-channel MOSFET manufactured by ELM.
description
- Features
ELM4P6115FDA-N uses advanced trench technology
- Vds=-60V to provide excellent Rds(on), low gate charge and low
- Id=-35A (Vgs=-10V) gate threshold voltage.
- Rds(on)=25mΩ (Vgs=-10V)
- Rds(on)=33mΩ (Vgs=-4.5V)
- Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current (Vgs=-10V)
Tc=25°C Tc=100°C
Pulsed drain current
Single pulse avalanche energy
Avalanche current
Total power dissipation
Tc=25°C
Storage temperature range
Operating junction temperature range
Symbol Vds Vgs
Id
Idm Eas Ias Pd Tstg Tj
Limit -60 ±20 -35 -27 -70 113 47.6 52.1 -55 to 150 -55 to 150
Unit
Note
2 m J
°C
°C
- Thermal characteristics
Parameter Thermal resistance junction-ambient Thermal resistance junction-case
Symbol Typ.
Rθja
- Rθjc
- Max. 62.0...
