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ELM51016CA-S - Complementary MOSFET

General Description

ELM51016CA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Key Features

  • N-channel.
  • Vds=20V.
  • Id=0.6A.
  • Rds(on)=360mΩ(Vgs=4.5V).
  • Rds(on)=420mΩ(Vgs=2.5V).
  • Rds(on)=560mΩ(Vgs=1.8V) http://www. elm-tech. com P-channel.
  • Vds=-20V.
  • Id=-0.4A.
  • Rds(on)=620mΩ(Vgs=-4.5V).
  • Rds(on)=860mΩ(Vgs=-2.5V).
  • Rds(on)=1450mΩ(Vgs=-1.8V).
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating juncti.

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Datasheet Details

Part number ELM51016CA-S
Manufacturer ELM
File Size 1.60 MB
Description Complementary MOSFET
Datasheet download datasheet ELM51016CA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary MOSFET ■General Description ELM51016CA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. ELM51016CA-S ■Features N-channel • Vds=20V • Id=0.6A • Rds(on)=360mΩ(Vgs=4.5V) • Rds(on)=420mΩ(Vgs=2.5V) • Rds(on)=560mΩ(Vgs=1.8V) http://www.elm-tech.com P-channel • Vds=-20V • Id=-0.4A • Rds(on)=620mΩ(Vgs=-4.5V) • Rds(on)=860mΩ(Vgs=-2.5V) • Rds(on)=1450mΩ(Vgs=-1.8V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 20 -20 V ±12 ±12 V 0.6 -0.4 A 0.4 -0.