ELM51933A-S Datasheet Dual P-channel MOSFET

Manufacturer: ELM

Overview: Dual P-channel MOSFET ELM51933A-S ■General.

Datasheet Details

ELM51933A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

http://www.elm-tech.com ■

Vds=-30V.
Id=-0.55A.
Rds(on) = 900mΩ (Vgs=-10V).
Rds(on) = 1000mΩ (Vgs=-4.5V).
Rds(on) = 1800mΩ (Vgs=-2.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -30 V ±12 V -0.55 A -0.15 -1.