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ELM51933A-S - Dual P-channel MOSFET

General Description

ELM51933A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=-30V.
  • Id=-0.55A.
  • Rds(on) = 900mΩ (Vgs=-10V).
  • Rds(on) = 1000mΩ (Vgs=-4.5V).
  • Rds(on) = 1800mΩ (Vgs=-2.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -30 V ±12 V -0.55 A -0.15 -1.

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Datasheet Details

Part number ELM51933A-S
Manufacturer ELM
File Size 835.79 KB
Description Dual P-channel MOSFET
Datasheet download datasheet ELM51933A-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual P-channel MOSFET ELM51933A-S ■General description ELM51933A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. http://www.elm-tech.com ■Features • Vds=-30V • Id=-0.55A • Rds(on) = 900mΩ (Vgs=-10V) • Rds(on) = 1000mΩ (Vgs=-4.5V) • Rds(on) = 1800mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -30 V ±12 V -0.55 A -0.15 -1.0 A 0.3 W 0.2 -55 to 150 °C ■Pin configuration SC-70-6(TOP VIEW) 6 5 4 1 2 3 Pin No.