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ELM52308AA-S - Single N-channel MOSFET

General Description

ELM52308AA-S

Key Features

  • http://www. elm-tech. com ELM52308AA-S uses advanced trench technology to.
  • Vds=60V provide excellent Rds(on), low gate charge and low gate.
  • Id=3.5A resistance.
  • Rds(on) = 98mΩ (Vgs=10V).
  • Rds(on) = 118mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70.

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Datasheet Details

Part number ELM52308AA-S
Manufacturer ELM
File Size 850.43 KB
Description Single N-channel MOSFET
Datasheet download datasheet ELM52308AA-S Datasheet

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Single N-channel MOSFET ■General description ELM52308AA-S ■Features http://www.elm-tech.com ELM52308AA-S uses advanced trench technology to • Vds=60V provide excellent Rds(on), low gate charge and low gate • Id=3.5A resistance. • Rds(on) = 98mΩ (Vgs=10V) • Rds(on) = 118mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 60 V ±20 V 3.5 2.5 A 10 A 1.25 0.80 W 150 °C - 55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja Typ. Max.