Datasheet4U Logo Datasheet4U.com

ELM52376A-S - Single N-channel MOSFET

General Description

ELM52376A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Key Features

  • Vds=60V.
  • Id=3.6A (Vgs=10V).
  • Rds(on) < 70mΩ (Vgs=10V).
  • Rds(on) < 78mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit 60 V ±20 V 3.6 2.8 A 10 A 1.25 0.80 W - 55 to 150 °C.
  • Ther.

📥 Download Datasheet

Datasheet Details

Part number ELM52376A-S
Manufacturer ELM
File Size 855.79 KB
Description Single N-channel MOSFET
Datasheet download datasheet ELM52376A-S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ELM5964-10F C-Band Internally Matched FET SUMITOMO
ELM5964-16F C-Band Internally Matched FET SUMITOMO
ELM5964-4PS C-Band Internally Matched FET SUMITOMO
ELM5964-7PS C-Band Internally Matched FET SUMITOMO
ELM-1081SURWA Dot Matrix Display Everlight

Other Datasheets by ELM

Part Number Description
ELM52308AA-S Single N-channel MOSFET
ELM52325AA-S Single P-channel MOSFET
ELM52326BSA-S Single N-channel MOSFET
ELM52354ASA-S Single N-channel MOSFET
ELM52444WSA-N Single N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Single N-channel MOSFET ELM52376A-S ■General description ELM52376A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. http://www.elm-tech.com ■Features • Vds=60V • Id=3.6A (Vgs=10V) • Rds(on) < 70mΩ (Vgs=10V) • Rds(on) < 78mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit 60 V ±20 V 3.6 2.8 A 10 A 1.25 0.80 W - 55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja Typ. Max.