The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Single N-channel MOSFET
ELM52444WSA-N
http://www.elm-tech.com
■General description
■Features
ELM52444WSA-N uses advanced trench technology to
• Vds=30V
provide excellent Rds(on), low gate charge and low gate
• Id=11A
threshold voltage.
• Rds(on) = 15mΩ (Vgs=10V)
• Rds(on) = 20mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current(Tj=150°C)
Pulsed drain current
Power dissipation
Operating junction temperature Storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs
Id
Idm
Pd
Tj Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
30
V
±20
V
11.0 A
8.8
40
A
3.5 W
2.2
150
°C
- 55 to 150
°C
■Thermal characteristics
Parameter Thermal resistance junction-to-ambient
Symbol
Typ.
Rθja
Max.