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ELM53484SA-S - Single N-channel MOSFET

General Description

ELM53484SA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Key Features

  • Vds=30V.
  • Id=30A.
  • Rds(on) = 13mΩ (Vgs=10V).
  • Rds(on) = 18mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±20 V 30 18 A 40 A 40 15 W 150 °C - 55 to 150 °C.

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Datasheet Details

Part number ELM53484SA-S
Manufacturer ELM
File Size 886.68 KB
Description Single N-channel MOSFET
Datasheet download datasheet ELM53484SA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Single N-channel MOSFET ELM53484SA-S ■General description ELM53484SA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. http://www.elm-tech.com ■Features • Vds=30V • Id=30A • Rds(on) = 13mΩ (Vgs=10V) • Rds(on) = 18mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 30 V ±20 V 30 18 A 40 A 40 15 W 150 °C - 55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja Typ. Max. 62.