ELM53814WA-N Datasheet PDF (Dual N-channel MOSFET)

ELM53814WA-N - Dual N-channel MOSFET

Features

ELM53814WA-N uses advanced trench technology.
Vds=20V to provide excellent Rds(on), low gate charge and.
Id=14A operation with gate voltages as low as 1.8V.
Rds(on) = 14mΩ (Vgs=4.5V).
Rds(on) = 18mΩ (Vgs=2.5V).
Rds(on) = 30mΩ (Vgs=1.8V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature r.

Datasheet Details

Part number	ELM53814WA-N
Manufacturer	ELM
File Size	880.04 KB
Description	Dual N-channel MOSFET
Datasheet	ELM53814WA-N Datasheet
Additional preview pages of the ELM53814WA-N datasheet.

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Full PDF Text Transcription

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Dual N-channel MOSFET (common drain) ELM53814WA-N http://www.elm-tech.com ■General description ■Features ELM53814WA-N uses advanced trench technology • Vds=20V to provide excellent Rds(on), low gate charge and • Id=14A operation with gate voltages as low as 1.8V. • Rds(on) = 14mΩ (Vgs=4.5V) • Rds(on) = 18mΩ (Vgs=2.5V) • Rds(on) = 30mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 14 A 10 20 A 2.0 W 1.

Published: Nov 8, 2025 |