ELM ELM53981A-S
Dual P-channel MOSFET
FEATURES
ELM53981A-S uses advanced trench technology to● Vds=-20V provide excellent Rds(on), low gate charge and low gate
● Id=-3.2A, Rds(on)=100mΩ (Vgs=-4.5V) threshold voltage.
● Id=-2.6A, Rds(on)=135mΩ (Vgs=-2.5V)
● Id=-1.5A, Rds(on)=190mΩ (Vgs=-1.8V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 V -3.2 A -2.6 -20 A 2.0 W 1.3 -55 to 150 °C
●Thermal characteristics Parameter Symbol Typ. Thermal resistance junction-to-ambient Steady-state Rθja Max. 120 Unit °C/W
●Pin configuration SOT-26(TOP VIEW) 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin name GATE1 SOURCE2 GATE2 DRAIN2 SOURCE1 DRAIN1
●Circuit D1 D2 G1 G2 S1 S2 Rev.1.0 1/5 Dual P-channel MOSFET
●Electrical characteristics ELM53981A-S Ta=25°C. Unless otherwise noted. Parameter Symbol Condition Min.