ELM53981A-S Datasheet PDF (Dual P-channel MOSFET)

ELM53981A-S - Dual P-channel MOSFET

Features

ELM53981A-S uses advanced trench technology to.
Vds=-20V provide excellent Rds(on), low gate charge and low gate.
Id=-3.2A, Rds(on)=100mΩ (Vgs=-4.5V) threshold voltage.
Id=-2.6A, Rds(on)=135mΩ (Vgs=-2.5V).
Id=-1.5A, Rds(on)=190mΩ (Vgs=-1.8V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=.

Datasheet Details

Part number	ELM53981A-S
Manufacturer	ELM
File Size	814.52 KB
Description	Dual P-channel MOSFET
Datasheet	ELM53981A-S Datasheet
Additional preview pages of the ELM53981A-S datasheet.

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Full PDF Text Transcription

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Dual P-channel MOSFET ELM53981A-S http://www.elm-tech.com ■General description ■Features ELM53981A-S uses advanced trench technology to • Vds=-20V provide excellent Rds(on), low gate charge and low gate • Id=-3.2A, Rds(on)=100mΩ (Vgs=-4.5V) threshold voltage. • Id=-2.6A, Rds(on)=135mΩ (Vgs=-2.5V) • Id=-1.5A, Rds(on)=190mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 V -3.2 A -2.6 -20 A 2.0 W 1.3 -55 to 150 °C ■Thermal characteristics Parameter Symbol Typ.

Published: Nov 10, 2025 |