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Dual P-channel MOSFET
ELM53993A-S
http://www.elm-tech.com
■General description
■Features
ELM53993A-S uses advanced trench technology to
• Vds=-30V
provide excellent Rds(on), low gate charge and low gate
• Id=-3.6A
threshold voltage.
• Rds(on)=150mΩ (Vgs=-10V)
• Rds(on)=235mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current(Tj=150°C)
Pulsed drain current
Power dissipation
Operating junction temperature Storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs
Id
Idm
Pd
Tj Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-30
V
±20
V
-3.6 A
-3.0
-15
A
2.0 W
1.3
150
°C
-55 to 150
°C
■Thermal characteristics
Parameter Thermal resistance junction-to-ambient
Symbol
Typ.
Rθja
Max.