ELM544539A-N
ELM544539A-N is Complementary MOSFET manufactured by ELM.
plementary MOSFET
- General Description
- Features http://.elm-tech.
ELM544539A-N uses advanced trench technology
- N-channel to provide excellent Rds(on) and low gate charge.
Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V)
Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V)
- P-channel
Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V)
Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V)
- Maximum Absolute Ratings
Parameter Drain-source voltage Gate-source voltage Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs Id Idm Pd
Tj,Tstg
Ta=25°C. Unless otherwise noted.
N-ch (Max.) P-ch (Max.) Unit
-30
±20
±20
-5.4
-4.2
-30
-55 to 150
-55 to...
