ELM ELM544539A-N
Complementary MOSFET
| Part No. | ELM544539A-N |
|---|---|
| Datasheet | ELM544539A-N Download |
| Manufacturer |  ELM |
| Description | Complementary MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
ELM544539A-N●
FEATURES
ELM544539A-N uses advanced trench technology● N-channel to provide excellent Rds(on) and low gate charge. Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V)
● P-channel Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V)
●Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj,Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 30 -30 V ±20 ±20 V 5.4 -5.4 A 4.0 -4.2 20 -30 A 2.8 2.8 W 1.8 1.8 -55 to 150 -55 to 150 °C
●Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol Device Typ. Steady-state Rθja N-ch Steady-state Rθja P-ch Max. 62.5 62.5 Unit °C/W °C/W
●Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 3 4 5 6 7 8 Pin name SO...
