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ELM54590CWSA-N - Complementary MOSFET

General Description

ELM54590CWSA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Key Features

  • N-channel.
  • Vds=100V.
  • Id=6.2A.
  • Rds(on)=45mΩ(Vgs=10V).
  • Rds(on)=50mΩ(Vgs=4.5V) http://www. elm-tech. com P-channel.
  • Vds=-100V.
  • Id=-5.2A.
  • Rds(on)=90mΩ(Vgs=-10V).
  • Rds(on)=100mΩ(Vgs=-4.5V).
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C.

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Datasheet Details

Part number ELM54590CWSA-N
Manufacturer ELM
File Size 1.37 MB
Description Complementary MOSFET
Datasheet download datasheet ELM54590CWSA-N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary MOSFET ■General Description ELM54590CWSA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. ELM54590CWSA-N ■Features N-channel • Vds=100V • Id=6.2A • Rds(on)=45mΩ(Vgs=10V) • Rds(on)=50mΩ(Vgs=4.5V) http://www.elm-tech.com P-channel • Vds=-100V • Id=-5.2A • Rds(on)=90mΩ(Vgs=-10V) • Rds(on)=100mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 100 -100 V ±20 ±20 V 6.2 -5.2 A 4.2 -3.4 20 -20 A 2.8 2.8 W 1.8 1.