ELM54801AA-N Datasheet | ELM

Dual P-channel MOSFET - General description ELM54801AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. - Features - - - - - Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 48mΩ (Vgs=-10V) Rds(on) < 57mΩ (Vgs=-4.5V) Rds(on) < 80mΩ (Vgs=-2.5V) - Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Avalanche current Avalanche energy Power dissipation Junction and storage temperature range L=0.1m H Ta=25°C Ta=70°C Ta=25°C Ta=70°C Symbol Vds Vgs Id Idm Ias, Iar Eas, Ear Pd Tj, Tstg Limit -30 ±12 -5 -4 -28 17 14 2.0 1.3 -55 to 150 Unit V V A A A m J W °C 3 3 3 2 Note - Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl Typ. 48.0 74.0 32.0 Max. 62.5 90.0 40.0 Unit °C/W °C/W °C/W Note 1 1, 4 - Pin configuration SOP-8(TOP VIEW) 2 3 4 - Circuit Pin No. 1 2 3 4 5 6 7 8 Pin name SOURCE2 GATE2 SOURCE1 GATE1 DRAIN1 DRAIN1 DRAIN2 DRAIN2 G1 S1 D1 D2 7 6 5 G2 S2 5- 1 Dual P-channel MOSFET - Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge NOTE : Symbol Condition Min. -30 -1 Tj=55°C -0.5 -28 40 60 45 60 18 -0.7 48 72 57 80 -1.0 -2.5 515 Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-5A Vgs=-10V, Vds=-15V 55 30 4.0 5.0 645 80 55 7.8 7.0 1.5 2.5 6.5 3.5 41.0...