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ELM54910WA-N Datasheet Dual N-channel MOSFET

Manufacturer: ELM

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General Description

ELM54910WA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.

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Overview

Dual N-channel MOSFET ELM54910WA-N ■General.

Key Features

  • N1 channel:.
  • Vds=40V.
  • Id=10.0A.
  • Rds(on) = 19mΩ (Vgs=10V).
  • Rds(on) = 25mΩ (Vgs=4.5V) http://www. elm-tech. com N2 channel:.
  • Vds=40V.
  • Id=10.0A.
  • Rds(on) = 10mΩ (Vgs=10V).
  • Rds(on) = 12mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Avalanche current Avalanche energy Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C L.

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