ELM54910WA-N Datasheet PDF (Dual N-channel MOSFET)

ELM54910WA-N - Dual N-channel MOSFET

Description

ELM54910WA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Features

N1 channel:.
Vds=40V.
Id=10.0A.
Rds(on) = 19mΩ (Vgs=10V).
Rds(on) = 25mΩ (Vgs=4.5V) http://www. elm-tech. com N2 channel:.
Vds=40V.
Id=10.0A.
Rds(on) = 10mΩ (Vgs=10V).
Rds(on) = 12mΩ (Vgs=4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Avalanche current Avalanche energy Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C L.

Datasheet Details

Part number	ELM54910WA-N
Manufacturer	ELM
File Size	1.01 MB
Description	Dual N-channel MOSFET
Datasheet	ELM54910WA-N Datasheet
Additional preview pages of the ELM54910WA-N datasheet.

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Full PDF Text Transcription

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Dual N-channel MOSFET ELM54910WA-N ■General description ELM54910WA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. ■Features N1 channel: · Vds=40V · Id=10.0A · Rds(on) = 19mΩ (Vgs=10V) · Rds(on) = 25mΩ (Vgs=4.5V) http://www.elm-tech.com N2 channel: · Vds=40V · Id=10.0A · Rds(on) = 10mΩ (Vgs=10V) · Rds(on) = 12mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Avalanche current Avalanche energy Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C L=0.1mH Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Ias Eas Pd Tj Tstg Ta=25°C. Unless otherwise noted.

Published: Nov 8, 2025 |