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ELM54943WSA-N - Dual P-channel MOSFET

Key Features

  • ELM54943WSA-N uses advanced trench technology.
  • Vds=-20V to provide excellent Rds(on) and low gate charge.
  • Id=-9.0A.
  • Rds(on)=23mΩ (Vgs=-4.5V).
  • Rds(on)=28mΩ (Vgs=-2.5V).
  • Rds(on)=35mΩ (Vgs=-1.8V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol.

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Datasheet Details

Part number ELM54943WSA-N
Manufacturer ELM
File Size 785.47 KB
Description Dual P-channel MOSFET
Datasheet download datasheet ELM54943WSA-N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual P-channel MOSFET ELM54943WSA-N http://www.elm-tech.com ■General description ■Features ELM54943WSA-N uses advanced trench technology • Vds=-20V to provide excellent Rds(on) and low gate charge. • Id=-9.0A • Rds(on)=23mΩ (Vgs=-4.5V) • Rds(on)=28mΩ (Vgs=-2.5V) • Rds(on)=35mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 V -9.0 A -7.0 -30 A 2.8 W 1.8 150 °C -55 to 150 °C ■Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max.