ELM55521CA-S Datasheet PDF (Complementary MOSFET)

ELM55521CA-S - Complementary MOSFET

Description

ELM55521CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

http://www. elm-tech. com N-channel P-channel.
Vds=100V.
Vds=-100V.
Id=5.0A.
Id=-5.0A.
Rds(on) = 110mΩ(Vgs=10V).
Rds(on) = 190mΩ(Vgs=-10V).
Rds(on) = 120mΩ(Vgs=4.5V).
Rds(on) = 200mΩ(Vgs=-4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=7.

Datasheet Details

Part number	ELM55521CA-S
Manufacturer	ELM
File Size	1.26 MB
Description	Complementary MOSFET
Datasheet	ELM55521CA-S Datasheet
Additional preview pages of the ELM55521CA-S datasheet.

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Full PDF Text Transcription

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Complementary MOSFET (common drain) ■General description ELM55521CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. ELM55521CA-S ■Features http://www.elm-tech.com N-channel P-channel • Vds=100V • Vds=-100V • Id=5.0A • Id=-5.0A • Rds(on) = 110mΩ(Vgs=10V) • Rds(on) = 190mΩ(Vgs=-10V) • Rds(on) = 120mΩ(Vgs=4.5V) • Rds(on) = 200mΩ(Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 100 -100 V ±20 ±20 V 5.0 -5.0 A 3.

Published: Nov 8, 2025 |