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ELM56332CESA-S - Complementary MOSFET

General Description

ELM56332CESA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge.

ESD protection is included.

Key Features

  • N-channel.
  • Vds=20V.
  • Id=1.2A.
  • Rds(on)=320mΩ(Vgs=4.5V).
  • Rds(on)=420mΩ(Vgs=2.5V).
  • Rds(on)=580mΩ(Vgs=1.8V).
  • ESD protection http://www. elm-tech. com P-channel.
  • Vds=-20V.
  • Id=-1.0A.
  • Rds(on)=580mΩ(Vgs=-4.5V).
  • Rds(on)=780mΩ(Vgs=-2.5V).
  • Rds(on)=980mΩ(Vgs=-1.8V).
  • ESD protection.
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed.

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Datasheet Details

Part number ELM56332CESA-S
Manufacturer ELM
File Size 1.41 MB
Description Complementary MOSFET
Datasheet download datasheet ELM56332CESA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary MOSFET ■General Description ELM56332CESA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. ESD protection is included. ELM56332CESA-S ■Features N-channel • Vds=20V • Id=1.2A • Rds(on)=320mΩ(Vgs=4.5V) • Rds(on)=420mΩ(Vgs=2.5V) • Rds(on)=580mΩ(Vgs=1.8V) • ESD protection http://www.elm-tech.com P-channel • Vds=-20V • Id=-1.0A • Rds(on)=580mΩ(Vgs=-4.5V) • Rds(on)=780mΩ(Vgs=-2.5V) • Rds(on)=980mΩ(Vgs=-1.8V) • ESD protection ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.