ELM56602CA-S Datasheet PDF (Complementary MOSFET)

ELM56602CA-S - Complementary MOSFET

Description

ELM56602CA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Features

http://www. elm-tech. com N-channel P-channel.
Vds=30V.
Vds=-30V.
Id=3.5A.
Id=-2.7A.
Rds(on)=75mΩ(Vgs=10V).
Rds(on)=135mΩ(Vgs=-10V).
Rds(on)=100mΩ(Vgs=4.5V).
Rds(on)=170mΩ(Vgs=-4.5V).
Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C.

Datasheet Details

Part number	ELM56602CA-S
Manufacturer	ELM
File Size	1.56 MB
Description	Complementary MOSFET
Datasheet	ELM56602CA-S Datasheet
Additional preview pages of the ELM56602CA-S datasheet.

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Full PDF Text Transcription

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Complementary MOSFET ■General Description ELM56602CA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. ELM56602CA-S ■Features http://www.elm-tech.com N-channel P-channel • Vds=30V • Vds=-30V • Id=3.5A • Id=-2.7A • Rds(on)=75mΩ(Vgs=10V) • Rds(on)=135mΩ(Vgs=-10V) • Rds(on)=100mΩ(Vgs=4.5V) • Rds(on)=170mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 30 -30 V ±20 ±20 V 3.5 2.6 -2.7 -2.1 A 15 -15 A 2.0 1.3 2.0 1.

Published: Feb 3, 2019 |