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ELM56610CWA-S - Complementary MOSFET

General Description

ELM56610CWA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Key Features

  • http://www. elm-tech. com N-channel P-channel.
  • Vds=100V.
  • Vds=-100V.
  • Id=2.3A.
  • Id=-1.0A.
  • Rds(on)=310mΩ(Vgs=10V).
  • Rds(on)=650mΩ(Vgs=-10V).
  • Rds(on)=320mΩ(Vgs=4.5V).
  • Rds(on)=700mΩ(Vgs=-4.5V).
  • Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=2.

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Datasheet Details

Part number ELM56610CWA-S
Manufacturer ELM
File Size 1.44 MB
Description Complementary MOSFET
Datasheet download datasheet ELM56610CWA-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary MOSFET ■General Description ELM56610CWA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. ELM56610CWA-S ■Features http://www.elm-tech.com N-channel P-channel • Vds=100V • Vds=-100V • Id=2.3A • Id=-1.0A • Rds(on)=310mΩ(Vgs=10V) • Rds(on)=650mΩ(Vgs=-10V) • Rds(on)=320mΩ(Vgs=4.5V) • Rds(on)=700mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 100 -100 V ±20 ±20 V 2.3 1.8 -1.0 -0.5 A 4 -4 A 2.0 1.3 2.0 1.