ELM ELM56820A-S
Dual N-channel MOSFET
| Part No. | ELM56820A-S |
|---|---|
| Datasheet | ELM56820A-S Download |
| Manufacturer |  ELM |
| Description | Dual N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Vds=20V● Id=3.4A
● Rds(on) = 58mΩ (Vgs=4.5V)
● Rds(on) = 68mΩ (Vgs=2.5V)
● Rds(on) = 88mΩ (Vgs=1.8V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 3.4 A 2.4 20 A 2.0 W 1.3 150 °C -55 to 150 °C
●Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max. 120 Unit °C/W
●Pin configuration SOT-26(TOP VIEW) 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin name GATE1 SOURCE2 GATE2 DRAIN2 SOURCE1 DRAIN1
●Circuit D1 D2 G1 G2 S1 S2 Rev.1.0 1/5 Dual N-channel MOSFET
●Electrical characteristics ELM56820A-S Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage On state drain current Static drain-source...
