ELM56820A-S Datasheet PDF (Dual N-channel MOSFET)

ELM56820A-S - Dual N-channel MOSFET

Description

ELM56820A-S uses advanced trench technology to provide excellent Rds(on) and low gate charge.

Features

Vds=20V.
Id=3.4A.
Rds(on) = 58mΩ (Vgs=4.5V).
Rds(on) = 68mΩ (Vgs=2.5V).
Rds(on) = 88mΩ (Vgs=1.8V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 3.4 A 2.4 2.

Datasheet Details

Part number	ELM56820A-S
Manufacturer	ELM
File Size	856.38 KB
Description	Dual N-channel MOSFET
Datasheet	ELM56820A-S Datasheet
Additional preview pages of the ELM56820A-S datasheet.

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Full PDF Text Transcription

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Dual N-channel MOSFET ELM56820A-S ■General description ELM56820A-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. http://www.elm-tech.com ■Features • Vds=20V • Id=3.4A • Rds(on) = 58mΩ (Vgs=4.5V) • Rds(on) = 68mΩ (Vgs=2.5V) • Rds(on) = 88mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 3.4 A 2.4 20 A 2.0 W 1.3 150 °C -55 to 150 °C ■Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max.

Published: Nov 8, 2025 |