ELM56882SA-N Datasheet PDF (Single N-channel MOSFET)

ELM56882SA-N - Single N-channel MOSFET

Description

ELM56882SA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Features

Vds=100V.
Id=17A.
Rds(on) = 9mΩ (Vgs=10V).
Rds(on) = 13mΩ (Vgs=4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Single pulse avalanche current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C L=0.1mH Tc=25°C Tc=75°C Symbol Vds Vgs Id Idm Ias Eas Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 100 V ±20 V 17 1.

Datasheet Details

Part number	ELM56882SA-N
Manufacturer	ELM
File Size	506.31 KB
Description	Single N-channel MOSFET
Datasheet	ELM56882SA-N Datasheet
Additional preview pages of the ELM56882SA-N datasheet.

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Full PDF Text Transcription

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Single N-channel MOSFET ELM56882SA-N ■General description ELM56882SA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. http://www.elm-tech.com ■Features • Vds=100V • Id=17A • Rds(on) = 9mΩ (Vgs=10V) • Rds(on) = 13mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Single pulse avalanche current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C L=0.1mH Tc=25°C Tc=75°C Symbol Vds Vgs Id Idm Ias Eas Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 100 V ±20 V 17 13 A 80 A 30 A 45 mJ 5.4 3.

Published: Feb 3, 2019 |