ELM ELM582050A-S
Dual N-channel MOSFET
| Part No. | ELM582050A-S |
|---|---|
| Datasheet | ELM582050A-S Download |
| Manufacturer |  ELM |
| Description | Dual N-channel MOSFET |
| Buy | Stock & Price |
FEATURES
ELM582050A-S uses advanced trench technology● Vds=20V to provide excellent Rds(on), low gate charge and
● Id=5A operation with gate voltages as low as 1.8V.
● Rds(on) = 29mΩ (Vgs=4.5V)
● Rds(on) = 37mΩ (Vgs=2.5V)
● Rds(on) = 50mΩ (Vgs=1.8V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 20 V ±12 V 5.0 A 3.2 20 A 2.0 W 1.3 150 °C - 55 to 150 °C
●Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max. 120 Unit °C/W
●Pin configuration SOT-26(TOP VIEW) 6 5 4 1 2 3 Pin No. 1 2 3 4 5 6 Pin name SOURCE1 DRAIN1 / DRAIN2 SOURCE2 GATE2 DRAIN1 / DRAIN2 GATE1
●Circuit Rev.1.0 1/5 Dual N-channel MOSFET (common drain)
●Electrical characteristics ELM582050A-S Ta=25°C. Unless otherwise noted.
