ELM582050A-S
ELM582050A-S is Dual N-channel MOSFET manufactured by ELM.
description
- Features
ELM582050A-S uses advanced trench technology
- Vds=20V to provide excellent Rds(on), low gate charge and
- Id=5A operation with gate voltages as low as 1.8V.
- Rds(on) = 29mΩ (Vgs=4.5V)
- Rds(on) = 37mΩ (Vgs=2.5V)
- Rds(on) = 50mΩ (Vgs=1.8V)
- Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current(Tj=150°C)
Pulsed drain current
Power dissipation
Operating junction temperature Storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs
Id
Idm
Pd
Tj Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
±12
5.0 A
2.0 W
°C
- 55 to 150
°C
- Thermal characteristics
Parameter Thermal resistance junction-to-ambient
Symbol
Typ.
Rθja...
