ELM582061A-S
ELM582061A-S is Dual P-channel MOSFET manufactured by ELM.
description
- Features
ELM582061A-S uses advanced trench technology to
- Vds=-20V provide excellent Rds(on), low gate charge and low gate
- Id=-4.5A threshold voltage.
- Rds(on)=56mΩ (Vgs=-4.5V)
- Rds(on)=70mΩ (Vgs=-2.5V)
- Rds(on)=96mΩ (Vgs=-1.8V)
- Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current(Tj=150°C)
Pulsed drain current
Power dissipation
Operating junction temperature Storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs
Id
Idm
Pd
Tj Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-20
±12
-4.5 A
-2.8
-15
2.0 W
°C
-55 to 150
°C
- Thermal characteristics
Parameter Thermal resistance junction-to-ambient...
