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ELM582061A-S - Dual P-channel MOSFET

Key Features

  • ELM582061A-S uses advanced trench technology to.
  • Vds=-20V provide excellent Rds(on), low gate charge and low gate.
  • Id=-4.5A threshold voltage.
  • Rds(on)=56mΩ (Vgs=-4.5V).
  • Rds(on)=70mΩ (Vgs=-2.5V).
  • Rds(on)=96mΩ (Vgs=-1.8V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=.

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Datasheet Details

Part number ELM582061A-S
Manufacturer ELM
File Size 778.16 KB
Description Dual P-channel MOSFET
Datasheet download datasheet ELM582061A-S Datasheet

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Dual P-channel MOSFET (common drain) ELM582061A-S http://www.elm-tech.com ■General description ■Features ELM582061A-S uses advanced trench technology to • Vds=-20V provide excellent Rds(on), low gate charge and low gate • Id=-4.5A threshold voltage. • Rds(on)=56mΩ (Vgs=-4.5V) • Rds(on)=70mΩ (Vgs=-2.5V) • Rds(on)=96mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 V -4.5 A -2.8 -15 A 2.0 W 1.