ELM ELM582061A-S
Dual P-channel MOSFET
| Part No. | ELM582061A-S |
|---|---|
| Datasheet | ELM582061A-S Download |
| Manufacturer |  ELM |
| Description | Dual P-channel MOSFET |
| Buy | Stock & Price |
FEATURES
ELM582061A-S uses advanced trench technology to● Vds=-20V provide excellent Rds(on), low gate charge and low gate
● Id=-4.5A threshold voltage.
● Rds(on)=56mΩ (Vgs=-4.5V)
● Rds(on)=70mΩ (Vgs=-2.5V)
● Rds(on)=96mΩ (Vgs=-1.8V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit -20 V ±12 V -4.5 A -2.8 -15 A 2.0 W 1.3 150 °C -55 to 150 °C
●Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max. 120 Unit °C/W
●Pin configuration SOT-26(TOP VIEW) 6 5 4 1 2 3 Pin No. Pin name 1 SOURCE1 2 DRAIN1/DRAIN2 3 SOURCE2 4 GATE2 5 DRAIN1/DRAIN2 6 GATE1
●Circuit Rev.1.0 1/5 Dual P-channel MOSFET (common drain)
●Electrical characteristics ELM582061A-S Ta=25°C. Unless otherwise noted. Parameter Symbol Condition Min.
