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Single P-channel MOSFET
ELM58463A-S
■General description
ELM58463A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.
http://www.elm-tech.com
■Features
• Vds=-40V • Id=-6A • Rds(on) = 46mΩ (Vgs=-10V) • Rds(on) = 62mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Operating junction temperature Storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs
Id
Idm
Pd
Tj Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-40 V
±20 V
-6.0 -4.2
A
-10 A
2.8 1.2
W
150 °C
- 55 to 150
°C
■Thermal characteristics
Parameter Maximum junction-to-ambient
Symbol Rθja
Typ.
Max.