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ELM58463A-S - Single P-channel MOSFET

Description

ELM58463A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Features

  • Vds=-40V.
  • Id=-6A.
  • Rds(on) = 46mΩ (Vgs=-10V).
  • Rds(on) = 62mΩ (Vgs=-4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit -40 V ±20 V -6.0 -4.2 A -10 A 2.8 1.2 W 150 °C - 55 to 150 °C.

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Datasheet Details

Part number ELM58463A-S
Manufacturer ELM
File Size 1.13 MB
Description Single P-channel MOSFET
Datasheet download datasheet ELM58463A-S Datasheet
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Single P-channel MOSFET ELM58463A-S ■General description ELM58463A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. http://www.elm-tech.com ■Features • Vds=-40V • Id=-6A • Rds(on) = 46mΩ (Vgs=-10V) • Rds(on) = 62mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit -40 V ±20 V -6.0 -4.2 A -10 A 2.8 1.2 W 150 °C - 55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja Typ. Max.
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