ELM58473A-S Datasheet PDF (Single P-channel MOSFET)

ELM58473A-S - Single P-channel MOSFET

Description

ELM58473A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Features

Vds=-60V.
Id=-4.8A.
Rds(on) = 135mΩ (Vgs=-10V).
Rds(on) = 155mΩ (Vgs=-4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vdss Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -60 V ±20 V -4.8 A -3.6 -10 A 2.8 W 1.2 - 55 to 150 °C.
Thermal charac.

Datasheet Details

Part number	ELM58473A-S
Manufacturer	ELM
File Size	867.86 KB
Description	Single P-channel MOSFET
Datasheet	ELM58473A-S Datasheet
Additional preview pages of the ELM58473A-S datasheet.

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Full PDF Text Transcription

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Single P-channel MOSFET ELM58473A-S ■General description ELM58473A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. http://www.elm-tech.com ■Features • Vds=-60V • Id=-4.8A • Rds(on) = 135mΩ (Vgs=-10V) • Rds(on) = 155mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vdss Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -60 V ±20 V -4.8 A -3.6 -10 A 2.8 W 1.2 - 55 to 150 °C ■Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max.

Published: Nov 8, 2025 |