ELM ELM58473A-S
Single P-channel MOSFET
FEATURES
● Vds=-60V● Id=-4.8A
● Rds(on) = 135mΩ (Vgs=-10V)
● Rds(on) = 155mΩ (Vgs=-4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vdss Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit -60 V ±20 V -4.8 A -3.6 -10 A 2.8 W 1.2 - 55 to 150 °C
●Thermal characteristics Parameter Thermal resistance junction-to-ambient Symbol Typ. Rθja Max. 120 Unit °C/W
●Pin configuration SOT-223(TOP VIEW) 1 2 3 Pin No. 1 2 3 Pin name GATE DRAIN SOURCE
●Circuit D G S Rev.1.0 1/5 Single P-channel MOSFET
●Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARA...