Datasheet4U Logo Datasheet4U.com

ELM59498A-S - Single N-channel MOSFET

General Description

ELM59498A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage.

Key Features

  • Vds=100V.
  • Id=10A.
  • Rds(on) = 135mΩ (Vgs=10V).
  • Rds(on) = 145mΩ (Vgs=4.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Single pulse avalanche current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Ias Pd Tj Tstg Ta=25°C. Unless otherwise noted. Limit Unit 100 V ±20 V 10 A 8 20.

📥 Download Datasheet

Datasheet Details

Part number ELM59498A-S
Manufacturer ELM
File Size 778.16 KB
Description Single N-channel MOSFET
Datasheet download datasheet ELM59498A-S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ELM5964-10F C-Band Internally Matched FET SUMITOMO
ELM5964-16F C-Band Internally Matched FET SUMITOMO
ELM5964-4PS C-Band Internally Matched FET SUMITOMO
ELM5964-7PS C-Band Internally Matched FET SUMITOMO
ELM-1081SURWA Dot Matrix Display Everlight

Other Datasheets by ELM

Part Number Description
ELM595301SA-S Single P-channel MOSFET
ELM51016CA-S Complementary MOSFET
ELM51933A-S Dual P-channel MOSFET
ELM52308AA-S Single N-channel MOSFET
ELM52325AA-S Single P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Single N-channel MOSFET ELM59498A-S ■General description ELM59498A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate threshold voltage. http://www.elm-tech.com ■Features • Vds=100V • Id=10A • Rds(on) = 135mΩ (Vgs=10V) • Rds(on) = 145mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Single pulse avalanche current Power dissipation Operating junction temperature Storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Ias Pd Tj Tstg Ta=25°C. Unless otherwise noted.