ELM ELM6PB8P6FCA-S
The power dissipation Pd is based on Tj(max)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. The value of Rθja is measured with the device mounted on 1 in² FR-4 board with 2 oz.| Part No. | ELM6PB8P6FCA-S |
|---|---|
| Datasheet | ELM6PB8P6FCA-S Download |
| Manufacturer |  ELM |
| Description | Single P-channel MOSFET |
| Buy | Stock & Price |
FEATURES
ELM6PB8P6FCA-S uses advanced trench technology to● Vds=-60V provide excellent Rds(on), low gate charge and low gate
● Id=-3.0A (Vgs=-10V) threshold voltage.
● Rds(on) = 83mΩ (Vgs=-10V)
● Rds(on) = 120mΩ (Vgs=-4.5V)
●Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Continuous drain current Pulsed drain current Continuous body diode forward current Avalanche current (L=0.1mH) Avalanche energy (L=0.5mH) Power dissipation Power dissipation Junction and storage temperature range Tc=25°C Tc=100°C Ta=25°C Ta=70°C Tc=25°C Tc=100°C Ta=25°C Ta=70°C Symbol Vds Vgs Id Idm Is Ias Eas Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit Note -60 V ±20 V -7.3 -6.3 A 1 -3.0 -2.4 A 2 -30 A 3 -4.8 A 1 -12 A 12 mJ 21.0 8.4 W 1 2.7 1.7 W 2 -55 to +150 °C
●Thermal characteristics Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient Symbol Typ. Rθjc - Rθja - Max. 6 47 Unit Note °C/W 1 NOTE : 1. 2. copper, in a still air environment with Ta=25°C.
