ELM6PB8P6FCA-S
ELM6PB8P6FCA-S is Single P-channel MOSFET manufactured by ELM.
description
- Features
ELM6PB8P6FCA-S uses advanced trench technology to
- Vds=-60V provide excellent Rds(on), low gate charge and low gate
- Id=-3.0A (Vgs=-10V) threshold voltage.
- Rds(on) = 83mΩ (Vgs=-10V)
- Rds(on) = 120mΩ (Vgs=-4.5V)
- Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current
Continuous drain current
Pulsed drain current Continuous body diode forward current Avalanche current (L=0.1m H) Avalanche energy (L=0.5m H)
Power dissipation
Power dissipation
Junction and storage temperature range
Tc=25°C Tc=100°C Ta=25°C Ta=70°C
Tc=25°C Tc=100°C Ta=25°C Ta=70°C
Symbol Vds Vgs
Id
Idm Is Ias Eas
Pd
Tj, Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-60
±20
-7.3 -6.3
-3.0 -2.4
-30
-4.8
-12...