ELM6PB8P6FCA-S - Single P-channel MOSFET

ELM

Key Features

ELM6PB8P6FCA-S uses advanced trench technology to.
Vds=-60V provide excellent Rds(on), low gate charge and low gate.
Id=-3.0A (Vgs=-10V) threshold voltage.
Rds(on) = 83mΩ (Vgs=-10V).
Rds(on) = 120mΩ (Vgs=-4.5V).
Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Continuous drain current Pulsed drain current Continuous body diode forward current Avalanche current (L=0.1mH) Avalanche energy (L=0.5mH.

ELM6PB8P6FCA-S single p-channel mosfet by ELM - Datasheet Preview

Datasheet Details

Part number	ELM6PB8P6FCA-S
Manufacturer	ELM
File Size	797.33 KB
Description	Single P-channel MOSFET
Datasheet	ELM6PB8P6FCA-S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ELM610DA	1.3A 36V PWM step down DC/DC converter	ELM Technology
ELM611DA	high efficiency synchronous PWM step down DC/DC converter	ELM Technology
ELM612DA	3A 36V PWM step down DC/DC converter	ELM Technology
ELM613DA	synchronous step-down DC/DC converter	ELM Technology
ELM621	SERIAL 3-BIT PORT	ELM Electronics

Other Datasheets by ELM

Part Number	Description
ELM650DA	CC/CV Mode 36V step down 2A DC/DC converter
ELM65103A-S	Single P-channel MOSFET
ELM0431BA	2.5V Programable shunt regulator
ELM1085DG	Bipolar 3A LDO Voltage regulator
ELM1085DG	Bipolar 3A LDO Voltage regulator

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Single P-channel MOSFET ELM6PB8P6FCA-S https://www.elm-tech.com ■General description ■Features ELM6PB8P6FCA-S uses advanced trench technology to • Vds=-60V provide excellent Rds(on), low gate charge and low gate • Id=-3.0A (Vgs=-10V) threshold voltage. • Rds(on) = 83mΩ (Vgs=-10V) • Rds(on) = 120mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Continuous drain current Pulsed drain current Continuous body diode forward current Avalanche current (L=0.1mH) Avalanche energy (L=0.5mH) Power dissipation Power dissipation Junction and storage temperature range Tc=25°C Tc=100°C Ta=25°C Ta=70°C Tc=25°C Tc=100°C Ta=25°C Ta=70°C Symbol Vds Vgs Id Idm Is Ias Eas Pd Tj, Tstg Ta=25°C. Unless otherwise noted.