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EMC646SP16J - 4Mx16 bit CellularRAM

Description

Functional Description Power-Up Initialization Bus Operating Modes Asynchronous Mode www.DataSheet4U.com Page Mode READ Operation Burst Mode Operation Mixed-Mode Operation WAIT Operation LB# / UB# Operation Low-Power Operation Standby Mode Operation Temperature Compensated Refresh Partial

Features

  • - Sigle device supports asynchrous, page and burst operation - Vcc, VccQ voltages: 1.7V.1.95V VCC 1.7V.1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: www. DataSheet4U. com 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 104 MHz (tCLK = 9.62ns) Burst initial latency: 38.5ns (4 clocks) @ 104 MHz , tACLK: 7ns @ 104 MHz - Page mode READ access: Sixteen-word page size Interpage READ access : 70ns Intrapage READ access : 20ns - Low power con.

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Datasheet Details

Part number EMC646SP16J
Manufacturer EMLSI
File Size 689.42 KB
Description 4Mx16 bit CellularRAM
Datasheet download datasheet EMC646SP16J Datasheet
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Full PDF Text Transcription

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Preliminary EMC646SP16J 4Mx16 CellularRAM Document Title 4Mx16 bit CellularRAM Revision History www.DataSheet4U.com Revision No. 0.0 History Initial Draft Draft Date July 05,2007 Remark Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Zip Code : 690-717 The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office.
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