EMC646SP16J Datasheet | EMLSI

FEATURES - Sigle device supports asynchrous, page and burst operation - Vcc, Vcc Q voltages: 1.7V.1.95V VCC 1.7V.1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: .. 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 104 MHz (t CLK = 9.62ns) Burst initial latency: 38.5ns (4 clocks) @ 104 MHz , t ACLK: 7ns @ 104 MHz - Page mode READ access: Sixteen-word page size Interpage READ access : 70ns Intrapage READ access : 20ns - Low power consumption: Asynchronous READ: <25m A Initial access, burst READ: (38.5ns [4 clocks] @ 104 MHz) <35m A Continuous burst READ: <30m A - Low-power features On-chip temperature pensated self refresh (TCSR) Partial array refresh (PAR) Deep Power-down(DPD) mode OPTIONS - Configuration: 64Mb (4 megabit x 16) - Vcc core / Vcc Q I/O voltage supply: 1.8V - Timing: 70ns access - Frequency: 83 MHz, 104 MHz - Standby current at 85°C Low Low Power : 140µA(max) Low Power : 160µA(max) Standard : 180µA(max) - Operating temperature range: Wireless -30°C to +85°C Preliminary 4Mx16 Cellular RAM Table of Contents Features Options General Description Functional Description Power-Up Initialization...