EN29F040A
EN29F040A is 4 Megabit (512K x 8-bit) Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
EN29F040A 4 Megabit (512K x 8-bit) Flash Memory
Features
- 5.0V operation for read/write/erase operations
- Fast Read Access Time
- 45ns, 55ns, 70ns, and 90ns
- Sector Architecture:
- 8 uniform sectors of 64Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent program or erase operations within individual sectors
- High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
- Low Standby Current
- 1µA CMOS standby current-typical
- 1m A TTL standby current
- Low Power Active Current
- 30m A active read current
- 30m A program/erase current
- JEDEC Standard program and erase mands
- JEDEC standard DATA polling and toggle bits feature
- Single Sector and Chip Erase
- Sector Unprotect Mode
- Embedded Erase and Program Algorithms
- Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
- 0.23 µm triple-metal double-poly triple-well CMOS Flash Technology
- Low Vcc write inhibit < 3.2V
- 100K endurance...
