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EN29F040A - 4 Megabit (512K x 8-bit) Flash Memory

General Description

The EN29F040A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each.

Any byte can be programmed typically in 10µs.

Key Features

  • 5.0V operation for read/write/erase operations.
  • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Sector Architecture: - 8 uniform sectors of 64Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors.
  • High performance program/erase speed - Byte program time: 10µs typical - Sector erase time: 500ms typical - Chip erase time: 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN29F040A 4 Megabit (512K x 8-bit) Flash Memory EN29F040A FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: - 8 uniform sectors of 64Kbytes each - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors • High performance program/erase speed - Byte program time: 10µs typical - Sector erase time: 500ms typical - Chip erase time: 3.