EPC EPC2015C
Power Transistor
| Part No. | EPC2015C |
|---|---|
| Datasheet | EPC2015C Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 40 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 48 V ID Continuous (TA = 25˚C, RθJA = 6°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 53 A 235 6 V -4 TJ Operating Temperature TSTG Storage Temperature -40 to 150 °C -40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction to Case 0.8 RθJB Thermal Resistance, Junction to Board 1.7 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1) 54 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. EPC2015C eGaN® FETs are supplied only in passivated die form with solder bars Die size: 4.1 mm x 1.6 mmAPPLICATIONS
● High Frequency DC-DC Conversion● Point-of-Load Converters
● Industrial Automation
● Synchronous Rectification
● Class-D Audio
● Low Inductance Motor Drives Benefits
● Ultra High Effic...
