EPC EPC2015
Power Transistor
| Part No. | EPC2015 |
|---|---|
| Datasheet | EPC2015 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Drain-to-Source Voltage (Continuous) 40 V VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C) 48 V ID Continuous (TA = 25˚C, θJA = 13) Pulsed (25˚C, Tpulse = 300 µs) 33 A 150 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 150 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 500 µA 40 IDSS Drain Source Leakage VDS = 32 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 9 mA 0.7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 33 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, VGS = 0 V, T = 150˚C All measurements were done with substrate shorted to source. Thermal Characteristics RθJC Thermal Resistance, Junctio...
